Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

MOS Capacitor01:25

MOS Capacitor

680
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
680
Characteristics of MOSFET01:17

Characteristics of MOSFET

330
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
330
MOSFET01:16

MOSFET

411
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
411
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

270
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
270
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

3.9K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
3.9K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.1K

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

Extraction techniques, structural features, structure-activity relationships and mechanisms of Imperata cylindrica polysaccharides against hyperuricemic nephropathy: A review.

Carbohydrate research·2026
Same author

A membrane-anchored nanoscale zero-valent iron bio-interface enhances interspecies electron transfer in anaerobic membrane bioreactors.

Bioresource technology·2026
Same author

Regulating hydrogen-bond network via competitive coordination for cryogenic aqueous Zn-ion batteries.

Journal of colloid and interface science·2026
Same author

Effect of the Polymerization Degree of Cardanol Polyoxyethylene Ether on the Oil-Water Interface: Experimental and Molecular Dynamics Simulation Study.

The journal of physical chemistry. B·2026
Same author

A comprehensive review of Stropharia rugosoannulata polysaccharides: Extraction methods, isolation and purification, structural features, chemical modification, biological activities, and application prospects.

Carbohydrate research·2026
Same author

A cross-sectional survey on pharmacists' protection against hazardous drugs in China based on USP <800>, NIOSH and ISOPP standards: Comparative analysis and improvement suggestions.

Journal of oncology pharmacy practice : official publication of the International Society of Oncology Pharmacy Practitioners·2026

関連する実験動画

Updated: May 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

Cu インターケレーション安定化 1T' MoS2

Huiyu Nong1, Junyang Tan1, Yujie Sun1

  • 1Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China.

Journal of the American Chemical Society
|February 3, 2025
PubMed
まとめ
この要約は機械生成です。

研究者 たち は 銅 を 1T に 入れ替える こと に 成功 し まし た

さらに関連する動画

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.2K
Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes
06:39

Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes

Published on: June 8, 2022

2.4K

関連する実験動画

Last Updated: May 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.2K
Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes
06:39

Tools for Surface Treatment of Silicon Planar Intracortical Microelectrodes

Published on: June 8, 2022

2.4K

科学分野:

  • 材料科学
  • 凝縮物質物理学
  • ナノテクノロジー

背景:

  • 二次元 (2D) 移行金属二カルコゲン化物 (TMDC) は調節可能な性質を提供します.
  • 低対称性1T'相TMDCは新しい現象の有望であるが,しばしば質と安定性が悪い.
  • インターカレートされたTMDCにおける構造-特性関係を理解することは,アプリケーションにとって極めて重要です.

研究 の 目的:

  • 高品質で熱的に安定した1T'MoS2を合成する.
  • 銅 (Cu) インターカレーターの正確な分布と配置を明らかにする.
  • 結果となるCu-インターカレート材料の輸送特性を調査する.

主な方法:

  • 銅 (Cu) を1T'MoS2にインターキャラする.
  • インターカレーターの位置を決定するための結晶分析.
  • 温度に依存する電気伝送測定

主要な成果:

  • 高結晶性および熱安定性 (~300 °Cまで) をCu-インターケラされた1T' MoS2で達成した.
  • 特定された Cu インターカレーターは,Mo サイトと並べた四面体間隔を占有しています.
  • 抵抗の有意な負の温度係数 (−4〜-2%) を有する絶縁ジャンプ輸送を観測した.

結論:

  • 1T'フェーズTMDCの品質と安定性をインターケレーションで向上させる方法を実証した.
  • 1T' MoS2における Cu インターケレーションの詳細な理解を確立した.
  • 構造設計と人工インターケレーションによる層状材料の特性変調の可能性を強調した.