関連する実験動画

Updated: Jun 14, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K

高性能p型2D半導体トランジスタのためのゲート駆動帯域調節ハイパードーピング

Bei Zhao1,2, Zucheng Zhang1, Junqing Xu3

  • 1Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory of Chemo and Biosensing, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.

Science (New York, N.Y.)
|June 12, 2025
PubMed
まとめ

研究者は,二次元 (2D) 半導体において,インターレイヤー・チャージ・トランスファー・ドーピングを用いてハイパードーピングを達成した. この方法により,高性能の2Dトランジスタが可能になり,記録的なオン状態の電流が得られました.

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