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Updated: Sep 8, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

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普遍的な異常な磁気抵抗の物理的起源

Lijun Zhu1,2, Qianbiao Liu1, Xiangrong Wang3

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

National science review
|August 20, 2025
PubMed
まとめ

単層の金属における巨大な異常磁気抵抗 (UMR) は,現在のスピン理論に異議を唱える. 新しい2ベクトル磁気抵抗モデルは,UMRを普遍的に説明し,以前のスピントロニクス研究を統一する.

キーワード:
アニゾトロピック磁気抵抗マグネト抵抗スピンホール効果スピンホール磁気抵抗スピントロニクス

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