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Updated: May 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

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Published on: November 1, 2013

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2次元電子ガスを探査するためのAlGaN/GaNヘテロ構造の赤外線近地スペクトロスコーピー

Ilario Bisignano1,2, Masataka Imura3, Nicholaus Kevin Tanjaya1,2

  • 1International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.

ACS applied materials & interfaces
|August 23, 2025
PubMed
まとめ

赤外線近地スペクトロスコーピー (ナノFTIR) は,AlGaN/GaNヘテロ構造の2D電子ガスを非侵襲的に特徴付けます. この技術は,重要な電子機器のアプリケーションに ナノスケール解像度を提供します.

キーワード:
AlGaN/GaN ヘテロ構造赤外線スペクトルナノFTIR近場顕微鏡二次元電子ガス

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