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Updated: Sep 10, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

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中間層 エンジニアリングされたフェロ電気NANDフラッシュ 次世代高密度ストレージシステムの信頼性と安定性のボトルネックを克服する

Giuk Kim1, Sangho Lee1, Hyojun Choi1

  • 1Department of Electrical engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|August 23, 2025
PubMed
まとめ

エンジニアリングゲートスタックを備えたフェロ電気トランジスタは,3D NANDフラッシュメモリの信頼性と安定性を向上させます. この進歩により,性能が向上し,次世代の非揮発性ストレージに より高いビット密度を可能にします.

キーワード:
NANDフラッシュチャージ・トラップ・フラッシュ鉄電機メモリ装置分極化

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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