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関連する概念動画

Chemical Shift: Internal References and Solvent Effects01:17

Chemical Shift: Internal References and Solvent Effects

764
In an NMR sample, precise measurement of the absolute absorption frequencies of nuclei is difficult. A standard internal reference compound is added, and the frequency difference between the reference signal and sample signals is measured.
The internal reference compound generally used in NMR spectroscopy is tetramethylsilane (TMS). TMS is preferred because it is chemically inert, soluble in NMR solvents, and easily removable. Also, the highly shielded methyl protons in TMS yield an intense...
764
Characteristics of Practical Op Amps01:16

Characteristics of Practical Op Amps

610
A difference amplifier, a crucial component in numerous electronic devices, ideally amplifies only the difference-mode signal, which is the difference between two input signals. However, in practical circuits, the output voltage depends on both the differential gain and the common-mode gain.
The ratio of differential gain to the common-mode gain is defined as the common-mode rejection ratio (CMRR). This ratio quantifies the ability of operational amplifiers (op-amps) to reject common-mode...
610
Second-order Op Amp Circuits01:19

Second-order Op Amp Circuits

422
Implementing second-order low-pass filters in audio systems is crucial in refining audio signals by eliminating undesirable high-frequency noise. These filters typically involve second-order op-amp circuits configured as voltage followers, encompassing two nodes with distinct storage elements.
The analysis of such circuits follows a systematic approach, similar to the second-order RLC circuits. In practical scenarios, bulky inductors are rarely employed due to their size and weight. This means...
422
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

331
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
331
Biasing of P-N Junction01:16

Biasing of P-N Junction

851
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
851
Biasing of FET01:22

Biasing of FET

368
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
368

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関連する実験動画

Updated: Sep 10, 2025

Enabling High Grayscale Resolution Displays and Accurate Response Time Measurements on Conventional Computers
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0.91V基準,3.3ppm/°C サブBGR 2次補償と改善されたPSRR

Chokkakula Ganesh1, Satheesh Kumar S2, A Shanthi3

  • 1Deptartment of Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India.

Scientific reports
|August 23, 2025
PubMed
まとめ

この研究は,優れた温度安定性とプロセス変動耐性を提供する新しいバンドギャップ参照回路 (BGR) を提示しています. 最適化された設計により,アナログアプリケーションの温度係数が大幅に低下し,電源の拒絶比率が改善されます.

キーワード:
絶対温度への補足 (CTAT)作業用アンプ電源の拒絶比率 (PSRR)プロセスの電圧温度 (PVT)絶対温度に比例する (PTAT)スタートアップ温度係数 (TC)

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関連する実験動画

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科学分野:

  • 電気工学
  • アナログ集積回路の設計

背景:

  • バンドギャップ・レファレンス (BGR) 回路は安定した電圧生成に不可欠です.
  • 従来のBGR設計は,温度安定性とプロセス変動の課題に直面しています.
  • 高精度なアプリケーションでは,温度係数やPSRRなどの性能メトリックが改善されます.

研究 の 目的:

  • 新しいバンドギャップ・レファレンス (BGR) 回路の設計と分析.
  • 温度安定性を高め,プロセスの変動効果を最小限に抑える.
  • 既存のBGRトポロジーと比較して優れた性能を達成します.

主な方法:

  • 第2次補償技術の導入
  • 最適化されたエラー増幅器と低温係数レジスタネットワークの設計.
  • PVTの変数下での安定した回路動作のための堅牢な起動メカニズムの開発.
  • 従来のCM-BGR,カスケードCM-BGR,Op-AmpベースのBGR,およびサブ-BGRとのシミュレーションと比較.

主要な成果:

  • 温度係数は3.33ppm/°C (58.97~78.79%の減少) であった.
  • 電力供給拒否比率 (PSRR) の1.12×-6.02×の改善が実証されました.
  • 723μVの変動で96%の改善されたライン調節を示した.
  • Op-AmpベースのBGRとSub-BGR技術よりも優れた性能を検証した.

結論:

  • 提案されたBGR回路は,温度安定性とプロセスの変動耐性を大幅に改善します.
  • 性能の向上により,BGRは高精度のアナログおよび混合信号アプリケーションに非常に適しています.
  • 32nm CMOS技術を使用してシミュレートされた設計は,BGR回路設計における顕著な進歩を表しています.