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Updated: Sep 10, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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周期的な固体の非周期的な欠陥

Robert H Lavroff1, Daniel Kats2, Lorenzo Maschio3

  • 1Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, California 90095, USA.

The Journal of chemical physics
|August 25, 2025
PubMed
まとめ

この研究は,材料の欠陥をモデル化するための欠陥のない埋め込み方法を導入します. このアプローチは,周期的なスーパーセルからのアーティファクトを回避し,正確な欠陥シミュレーションのための熱力学限界 (TDL) へのより速い収束を可能にします.

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