関連する実験動画

Updated: Sep 10, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

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Published on: August 28, 2018

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WSe2/SnS2は,スケーラブルなp型トランジスタと論理回路のための双方向蓄積コンタクトを持つ異質構造配列である

Chenguang Zhu1, Biyuan Zheng2, Xingxia Sun1

  • 1Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China.

Nano letters
|August 25, 2025
PubMed
まとめ

研究者らは,tungsten diselenide (WSe2) とtin disulfide (SnS2) のヘテロ結合を用いた高性能p型フィールド効果トランジスタ (FET) を開発した. この新しい双方向蓄積コンタクトFET (BAC-FET) 設計は,キャリア注入を大幅に強化し,高度な電子機器のコンタクト抵抗を減少させます.

キーワード:
双方向の蓄積フィールド効果トランジスタロジック回路自己調整したエッチングタイプIII

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