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Updated: Sep 10, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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シリコン単結晶成長システムの反乱スイッチング制御 測定されていない状態

Yankai Li, Chen Chen, Ding Liu

    IEEE transactions on cybernetics
    |August 25, 2025
    PubMed
    まとめ

    この研究では,シリコン単一結晶の成長に対する反乱スイッチング制御を導入し,測定されていない状態と乱れを管理することによって精度を高めます. この新しいアプローチは,サブシステム間の制御されたスイッチングによってシステムの精度を改善します.

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