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Updated: Sep 10, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Published on: November 24, 2016

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変磁性半導体Mg (FeN) 2単層で大谷極化を実現する

Qiqi Wang1, Li Deng1, Yanzhao Wu2

  • 1Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.

Inorganic chemistry
|August 26, 2025
PubMed
まとめ

この研究は,ヴァレートロニクスのための新しいアルターマグネット半導体としてMg (FeN) 2を導入します. 電気場とストレスを組み合わせることで これらの材料の谷間偏振を制御する強力な方法が提供されます

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