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Updated: Sep 10, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

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ヴァン・デル・ワールズの磁気トンネル交差点 双次元1T-VSe2と回転的に並べられたh-BN単層に基づく

Qiaoxuan Zhang1,2, Cong Wang3, Wenjie Wang4

  • 1Department of Electrical Engineering and Automation, Hebei University of Water Resources and Electric Engineering, Cangzhou 061001, China.

Nanomaterials (Basel, Switzerland)
|August 27, 2025
PubMed
まとめ

ヴァン・デル・ワールズの磁気トンネル結合 (MTJ) の六角性ボロン・ニトリド (h-BN) 絶縁層の回転は,その性能を劇的に変化させます. この回転角度工学により,スピントロニックデバイスのトンネリング磁気抵抗 (TMR) の比率を大幅に制御できます.

キーワード:
1T-VSe2 について磁気トンネルの交差点トウィストアングル工学バン・デル・ワールズ

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