0.049 mm2 0.5-to-5.8 GHz LNA アクティブ・インダクタと低容量ESD保護に基づいてフラット・ハイ・ゲインを達成する
Dawei Dong1, Zhenrong Li1, You Quan1
1School of Microelectronics, Xidian University, Xi'an 710126, China.
Micromachines
|August 28, 2025
まとめ
この研究では,アクティブインダクター (AI) と改良された静電放電ダイオード (ESD) を使用した0.5-5.8GHzの低騒音増幅器 (LNA) が提示されています. LNAは優れた増益と低ノイズ値を達成し,RFアプリケーションで堅実な性能を示しています.
科学分野:
- 電気工学
- マイクロ電子
- RF回路の設計
背景:
- 低騒音増幅器 (LNA) は,無線周波数 (RF) システムの重要な構成要素です.
- LNAの性能を改善するには,アクティブコンポーネントと保護回路の進歩が必要です.
- プロセスの変化や寄生的な影響は,LNAの効率を低下させる可能性があります.
研究 の 目的:
- 新しい0.5-5.8GHzのLNA設計を導入する.
- Gyrator-Cベースのアクティブインダクター (AI) と改善された深溝分離 (DTI) 静電放電 (ESD) ディオードを使用してLNAの性能を向上させる.
- 開発されたLNAの増幅平らさと騒音特性を分析する.
主な方法:
- 0.18μm SiGe BiCMOS技術を使用した0.5-5.8 GHzのLNAの設計と製造.
- 一貫した性能のためのギラータ-Cベースのアクティブインダクター (AI) の統合.
- 寄生体容量を最小限に抑えるための強化されたDTI ESDダイオードの実装.
主要な成果:
- LNAは0.5-5.8GHz帯域で18.3±0.3dBの高いS21を達成しました.
- 最低2.6dBの騒音値が記録された.
- S11とS22のパラメータは -10dB以下であり,良好なインペダンスマッチングを示しています.
- アクティブインダクターは,プロセス,電圧,温度 (PVT),および入力電力の変動に際して優れた一貫性を示した.
- 強化されたDTIダイオードは寄生体の容量を平均8.5%減少させた.
結論:
- 開発されたLNAは,高増益と低騒音で優れた性能を示しています.
- AIと強化されたDTI ESDダイオードの統合は,LNAの一貫性の向上と寄生性の減少に貢献します.
- LNAは,安定して効率的な増幅を必要とする高周波アプリケーションに適しています.
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