バッファ付きのGaN HEMT オシレータ

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Updated: Sep 9, 2025

Fabrication and Testing of Microfluidic Optomechanical Oscillators
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Fabrication and Testing of Microfluidic Optomechanical Oscillators

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Sheng-Lyang Jang1, Ching-Yen Huang1, Tzu Chin Yang1

  • 1Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan.

Micromachines
|August 28, 2025
PubMed
まとめ

この研究では,3つのガリウム窒素高電子流動性トランジスタ (GaN-HEMT) を調査し,信頼性の高い高性能無線周波数回路の設計を強化しています. 最適化された構造は効率と相ノイズを 改善し,これは先進的な電子機器にとって 極めて重要です.

キーワード:
GaN HEMT パワーオシレータバッファー功績の数字左手の送電線ステージノイズ信頼性

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