関連する実験動画

Updated: Sep 9, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

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先進的なTCADシミュレーションとダイナミック検証によるトレンチMOSFETのプレシリコン精密なSPICEモデリング

Ammar Tariq1, Giovanni Minardi2, Valeria Cinnera Martino2

  • 1Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences (MIFT), University of Messina, 98166 Messina, Italy.

Micromachines
|August 28, 2025
PubMed
まとめ

この研究は,TCADシミュレーションを使用してパワーMOSFETのSPICEモデルを抽出するための仮想ワークフローを導入し,物理プロトタイプの必要性を排除します. これは設計サイクルを加速し,ダイナミック特性の精度を改善します.

キーワード:
パワーMOSSPICEモデルUTMOST IV について装置プロセス勝利

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