Mingzheng Wu1,2, Kaiqing Zhang3,4,2, Priscilla J Y Fok1,5,2

  • 1Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, IL 60208, USA.

Device
|August 29, 2025
PubMed
まとめ

この研究は,安全な生物医学的なアプリケーションに不可欠な,植入可能な光電子機器からの熱を管理するための枠組みを提示しています. 開発された方法は,デバイスを最適化し,熱負荷を軽減し,安全な in vivo 操作を確保します.

関連する概念動画

Calculation of Electric Flux01:25

Calculation of Electric Flux

Consider the electric field of an oppositely charged, parallel-plate system and an imaginary box between those plates. Let the bottom face of the box be ABCD, and the top face be FGHK. The electric field between the plates is uniform and points from the positive plate toward the negative plate. The calculation of this field's flux through the box's various faces shows that the net flux through the box is zero. Why does the flux cancel out here?
Induced Electric Fields: Applications01:27

Induced Electric Fields: Applications

An important distinction exists between the electric field induced by a changing magnetic field and the electrostatic field produced by a fixed charge distribution. Specifically, the induced electric field is nonconservative because it does not work in moving a charge over a closed path. In contrast, the electrostatic field is conservative and does no net work over a closed path. Hence, electric potential can be associated with the electrostatic field but not the induced field. The following...
Electrogravimetric Analysis: Overview01:30

Electrogravimetric Analysis: Overview

Electrogravimetric analysis measures the weight of an analyte deposited electrolytically onto a suitable working electrode. This method involves applying a potential to a pre-weighed electrode submerged in a solution, which results in the desired substance being deposited through reduction at the cathode or oxidation at the anode. The electrode's weight is recorded after deposition, and the difference in weight gives the analyte's weight in the solution.
To test the completeness of the...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...