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Updated: Jun 8, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.0K

3次元パラメータ空間を使用した,強化された穀物境界インデックス化の新しいEBSDインデックス化方法

Fan Peng1, Xuemei Song1, Yiling Huang1

  • 1The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China.

Ultramicroscopy
|August 29, 2025
PubMed
まとめ

新しい電子逆分散 (EBSD) インデックス法では,3Dパラメータ空間を使用して,結晶学的分析が改善されています. このテクニックは,特に穀物境界でパターンのインデックス化を強化し,より広範な開発を促進します.

キーワード:
EBSD について穀物の境界線パターンインデックス法三次元パラメータ空間

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Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction09:13

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Visualization of Failure and the Associated Grain-Scale Mechanical Behavior of Granular Soils under Shear using Synchrotron X-Ray Micro-Tomography09:00

Visualization of Failure and the Associated Grain-Scale Mechanical Behavior of Granular Soils under Shear using Synchrotron X-Ray Micro-Tomography

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