関連する実験動画

Updated: Sep 9, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

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鉄電気メモリ装置におけるストキャスティシティとプロセスによる損傷の物理的相関

Ryun-Han Koo1, Seungwhan Kim1, Jiseong Im1

  • 1Department of Electrical and Computer Engineering and Inter- University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea.

Nano convergence
|August 29, 2025
PubMed
まとめ

噴射プラズマの力は,トラップの密度を変化させることで,鉄電トンネル交差点 (FTJ) の性能に影響します. プラズマ条件を最適化すると 騒音が最小化され 記憶と神経形デバイスが強化され 信頼性が確保されます

キーワード:
鉄道トンネルの交差点低周波ノイズ (LFN)プラズマによる損傷ストカスティシティトラップの形成

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