Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

Ferromagnetism01:31

Ferromagnetism

2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Non-ohmic Devices00:51

Non-ohmic Devices

1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
Fatigue01:21

Fatigue

237
Fatigue occurs when materials rupture under repeated or fluctuating loads, even at stress levels far below their static breaking strength. It typically results in brittle failure, even for ductile materials. It is a critical consideration in designing machines and structural components subjected to repetitive or varying loads. The nature of these loadings can range from fluctuating loads like unbalanced pump impellers causing vibrations to repeatedly bending a thin steel rod wire back and forth...
237
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
MOS Capacitor01:25

MOS Capacitor

958
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
958
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

1.4K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.4K

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

Direct Observation of Conduction Mechanism in Te-Based Selector-Only Memory via Low-Frequency Noise Characterization.

Nano letters·2026
Same author

A ferroelectric-ionic-trapping transistor for low power and secure neuromorphic computing.

Nature communications·2026
Same author

Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.

Nature communications·2026
Same author

A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doubler.

Microsystems & nanoengineering·2026
Same author

Thermally activated excess noise by subgap density-of-states in Si-doped ZnSnO thin-film transistor-type gas sensor.

Microsystems & nanoengineering·2026
Same author

Sub-mV tunable photonic p-bits for probabilistic computing.

Science advances·2026

関連する実験動画

Updated: Sep 9, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.8K

鉄電気メモリ装置におけるストキャスティシティとプロセスによる損傷の物理的相関

Ryun-Han Koo1, Seungwhan Kim1, Jiseong Im1

  • 1Department of Electrical and Computer Engineering and Inter- University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea.

Nano convergence
|August 29, 2025
PubMed
まとめ

噴射プラズマの力は,トラップの密度を変化させることで,鉄電トンネル交差点 (FTJ) の性能に影響します. プラズマ条件を最適化すると 騒音が最小化され 記憶と神経形デバイスが強化され 信頼性が確保されます

キーワード:
鉄道トンネルの交差点低周波ノイズ (LFN)プラズマによる損傷ストカスティシティトラップの形成

さらに関連する動画

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method
07:37

Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method

Published on: January 16, 2019

9.8K

関連する実験動画

Last Updated: Sep 9, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.8K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method
07:37

Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method

Published on: January 16, 2019

9.8K

科学分野:

  • 材料科学
  • 固体物理学
  • 装置工学

背景:

  • HfZrO2 (HZO) ベースのフェロ電気トンネルジャンクション (FTJ) は,メモリおよびニューロモルフィックアプリケーションに有望である.
  • プラズマのスプッタリングプロセスは,デバイスの電気的特性に影響を与える,欠陥を導入することができます.

研究 の 目的:

  • HZOベースのFTJのストキャスティック性質にスプッタリングによるダメージがどのように影響するかを調査する.
  • プラズマ誘発の欠陥を制御することによって,メモリとニューロモルフィックのアプリケーションのためのデバイスのパフォーマンスを最適化します.

主な方法:

  • 低周波ノイズ (LFN) スペクトロスコピーは,ストキャスティック特性を分析するために使用されました.
  • 温度依存の電気測定が行われました.
  • 噴射プラズマの電力は,上部電極の沈殿時に体系的に変化した.

主要な成果:

  • スプッタリングプラズマのパワーが増加したため,HZO層のトラップ密度は高まった.
  • トラップの密度が高くなり,プール・フレンケル伝導と電流騒音の大きさが増加した.
  • オン電流密度と鉄電トンネル電抵抗 (TER) の比率が増加したが,ストキャスティック波動が増加した.

結論:

  • プラズマプロセスの条件は,FTJのトラップ密度,LFN,およびデバイスの性能に重大な影響を及ぼします.
  • スパッタリングパラメータを最適化すると,電気性能を向上させながらストキャスティックノイズを最小限に抑えることができます.
  • この研究は,信頼性の高い,次世代のフェロ電気ベースの記憶と神経形システムを開発するためのガイドラインを提供します.