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表面点の欠陥がGeSiの散発材料の電子的および光学的性質に与える影響

Hai Wan1,2, Haijuan Zhang3, Huifeng Bi4

  • 1School of Environmental & Safety Engineering, Liaoning Petrochemical University, Fushun, 113001, China. wanhai@lnpu.edu.cn.

Physical chemistry chemical physics : PCCP
|September 1, 2025
PubMed
まとめ

ゲルマニウム-シリコン (GeSi) 化合物の点欠陥は,光電子特性に大きな影響を与える. バンドギャップと吸収を変化させ,デバイスの最適化に不可欠です.

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