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Updated: Sep 9, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

シングルレイヤのFeSeの強化超伝導性を基板表面端末を通して解き放つ

Qiang Zou1, Gi-Yeop Kim2, Jong-Hoon Kang3

  • 1Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States.

Nano letters
|September 3, 2025
PubMed
まとめ

単層の鉄セレニド (FeSe) フィルムにおける超伝導性の強化は,最適な電子相関と基板の電荷移転に関連しています. この研究では,ストロンチウムチタネート (SrTiO3) 基板の異なる表面端末がFeSeの超伝導性にどのように影響するかを明らかにした.

キーワード:
FeSe についてSe−Fe−Se四面体角度についてSrO末端の SrTiO3TiO2 末端の SrTiO3 について電子相関スキャントンネル顕微鏡

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Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride04:51

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