pBiCuSeO

Lingyuan Kong1,2, Wei Li1,2, Zihao Wang1

  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

まとめ

原子的に薄い2Dフェロ電気半導体は 次世代の電子機器の鍵です 研究者はBiCuSeOフィルムを合成し,室温の鉄電性を確認し,高度な電子機器の可能性を示しました.

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