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Updated: Sep 9, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.8K

シャットキー・バリアとトンネル・レジスタンスの制御 ヴァン・デル・ワールス・インターレイヤーによる接触

Xi Geng1, Yufei Xue1, Ruiping Duan1

  • 1Faculty of Materials Science and Engineering, Kunming University of Science and Technology, No. 68 Wenchang Road, Kunming 650093, China.

ACS applied materials & interfaces
|September 5, 2025
PubMed
まとめ

この研究では,セレニド銅 (Cu2Se) 2D材料の金属接触を調査し,オーム接触が形成されていることを発見しました. グラフェンやh-BNのようなインターレイヤーは 調節可能なショットキーバリアを より良いナノデバイスに可能にします

キーワード:
スコットキーの障壁コンタクト特性最初の原則の計算トンネルレジスタンス二次元グループ11カルコゲニドヴァン・デル・ワールズのインターレイヤー

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

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関連する概念動画

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
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