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ボロン改変ヘテロインターフェースはケステライト太陽電池を0.58Vのオープン回路電圧にアップします

Sisi Jia¹, Wenjie Zhu¹, Chun Guo¹

¹Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province & Zhejiang Institute for Advanced Light Source, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang, 321004, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)

|September 5, 2025

まとめ

ケステライト太陽電池の非金属ボルン改造は表面の欠陥を無効化し,再結合を減少させます. この戦略により,オープン回路の電圧 (V_OC) と電力変換効率 (PCE) が向上し,太陽光発電の収穫が向上します.

科学分野:

材料科学
再生可能エネルギー
半導体物理学

背景:

ケステライト Cu2ZnSn(S,Se) 4 (CZTSSe) 太陽電池は,高開路電圧 (V_OC) を達成する上で課題に直面しています.
ヘテロインターフェース (HEI) での電荷キャリア再結合は,CZTSSe太陽電池の性能の主要な制限です.
HEIの最適化は,再結合の損失を軽減し,デバイスの効率を改善するために不可欠です.

研究の目的:

CZTSSeの太陽電池のHEIを最適化するための革新的な非金属ボロン (B) 改変戦略を開発する.
HEIでの電荷キャリア再結合の問題に対処し,V_OCを強化する.
表面の受動化と帯状の曲折に対するB変異の影響を調査する.

主な方法:

非金属ボロン (B) 改変方法を用いたCZTSSe吸収器の表面被動化.
セレニゼーションの過程で,BをHEIの表面に近い領域に吸収する.
B_Cuによる欠陥の特徴と,その電子特性への影響.

主要な成果:

ボロンは,新しい欠陥を導入することなく,ぶら下がった結合を飽和させることで,表面状態を効果的に無効化します.
Bの拡散は弱いn型B_Cuドナー欠陥を生み出し,バレンスの帯の最大値 (VBM) を低下させ,フェルミレベルのピニングを緩和します.
0.58Vの強化V_OCで13.35%の安定したパワー変換効率 (PCE) を達成しました.

結論:

CZTSSe太陽電池のHEIを最適化するための有望な戦略です.
このアプローチは,電荷キャリアの再結合を効果的に減らし,V_OCを改善します.
B型改造技術はケステライト太陽電池技術の進歩に大きな可能性を秘めている.

キーワード:

B-修正について Cu2ZnSn(S,Se) 4 についてフェルミレベルのピニングヘテロインターフェイスと表面状態オープン回路の電圧

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