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Updated: Sep 8, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.8K

ゲート・イソレータ・スタック・エンジニアリングによるシナプス回路アプリケーションのためのInGaZnO薄膜トランジスタのオン・ストリームと信頼性の向上

Narae Han1,2, Youngchae Roh1,3,4, Ha-Jun Sung1,2

  • 1Department of Material Sciences and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

ACS applied materials & interfaces
|September 5, 2025
PubMed
まとめ

設計された多層ゲート隔離器は,オン電流とバイアスの安定性を向上させ,無形なInGaZnO薄膜トランジスタ (a-IGZO TFT) を強化します. この新しいアプローチは,高度な統合回路とニューロモルフィックアプリケーションのための介電スタックを最適化します.

キーワード:
アモルフなIGZO (a-IGZO)バイアス・ストレスの安定性ゲート介電スタックインターフェースエンジニアリングシナプス装置

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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors10:31

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