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Updated: May 2, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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ロバストエピタキシ ランタンパッシバートされたサファイア上の単結晶移行金属二カルコゲニド

Xilu Zou1,2, Yuanyuan Zhao2,3, Dongxu Fan2,4,5

  • 1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.

Science (New York, N.Y.)
|October 23, 2025
PubMed
まとめ

研究者は,ランタン受容を用いた単結晶2D移行金属二カルコゲニド (TMDC) 半導体のウェファースケールの成長を達成した. この突破により,シリコン以外の高度な電子機器に 高品質で均一なTMDCウェーバーが実現しました

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