関連する実験動画

Updated: Aug 11, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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垂直配向TiS₂層によるプラズマ誘起金属硫化および二端子デバイス応用

Hyelim Shin1, Jae Woo Kim2, Sujeong Han1

  • 1Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon 16419, South Korea.

ACS applied materials & interfaces
|December 12, 2025
PubMed
まとめ

新規の垂直配向TiS₂層（VATL）は、半導体デバイスの拡散バリアおよび接着促進剤として機能します。この戦略は、接触抵抗を大幅に低減し、ナノエレクトロニックデバイスのオン電流を増強します。

キーワード:
接着層接触抵抗拡散バリア金属層硫化プラズマ処理垂直配向TiS₂層

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関連する概念動画

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...