分子動力学シミュレーションによるSiC精密研削における砥粒形状が材料除去機構と表面完全性に及ぼす影響

This paper investigates the influence of different abrasive morphology of silicon carbide (SiC) through molecular dynamics simulations on the scratching process, aiming to provide theoretical guidance and process optimization directions for the precision machining of SiC materials. The paper analyzes the differences in contact area, stress distribution, and material deformation mechanisms between sphere, cone, frustum cone, face of a square pyramid and edge of a square pyramid abrasives during the scratching process. It focuses on key characteristics such as scratching force, atom removal, surface topography, amorphous deformation, and subsurface stress distribution. The results show that the morphology of the abrasive significantly affects machining efficiency and surface quality, with sphere abrasives being more prone to plastic deformation and pyramid abrasives tending to cause brittle fracture. Additionally, the interaction between abrasive morphology and SiC crystal orientation also has a significant impact on the scratching process. This paper not only reveals the surface formation mechanisms of SiC under different abrasive morphology but also provides important theoretical and experimental basis for achieving more efficient and precise SiC material machining.