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Updated: Jul 3, 2026

Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

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プラズモニックBTO-on-SiNプラットフォーム - 光通信向け200 GBd変調を超えて

Manuel Kohli1, Daniel Chelladurai2, Laurenz Kulmer2

  • 1ETH Zurich, Institute of Electromagnetic Fields, Zurich, Switzerland. mkohli@ethz.ch.

Light, science & applications
|December 15, 2025
PubMed
まとめ

高​​速電気光学変調器用のプラズモニックバリウムチタン酸-窒化ケイ素（BTO-on-SiN）プラットフォームを開発しました。この統合フォトニクスソリューションは、高度な光通信システムで記録的な448 Gbit/sまでのデータレートを達成します。

キーワード:
プラズモニック変調器BTO-on-SiN光通信高速変調器シリコンナイトライドバリウムチタン酸統合フォトニクス電気光学効果

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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...