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Updated: Jan 8, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Published on: September 14, 2018

ピクセル化吸収層補正に基づく高効率EUVマスク欠陥補償方法

Hanzhi Zhang, Sikun Li, Xiaowei Song

|December 19, 2025

まとめ

この要約は機械生成です。

新しいピクセル化欠陥補償方法は、高度な半導体ノード向けの極端紫外線（EUV）リソグラフィを強化します。この効率的なアプローチは、マスク製造可能性を確保しながら、0.55 NAシステムで精度と速度を向上させます。

キーワード:

EUVリソグラフィマスク欠陥欠陥補償ピクセル化吸収層半導体製造 7nmノード 0.55 NA

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関連する実験動画

Last Updated: Jan 8, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

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Published on: September 14, 2018

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