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Updated: Apr 13, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
カーボンナノチューブ量子ドットに基づくトンネル共鳴システムの安定図および電気伝導度のモデリング
1School of Physics, Beijing Institute of Technology, Beijing 100081, China. alimoulhim@gmail.com.
Abstract:
Carbon nanotubes (CNTs) and CNT-based quantum dots (CNTQDs) hold significant promise for next-generation quantum and digital computing devices. This study presents a comprehensive theoretical analysis of the electronic properties of CNTs and CNTQDs, focusing on their stability diagrams and electrical conductance characteristics. Using the constant interaction model (CIM) and Green's function formalism within the Keldysh framework, we derive the quantized energy levels of the CNTQDs, evaluate their Coulomb blockade phenomena, and deduce the electrical conductance through the CNTQDs. This study illustrates how valley and spin degeneracy lead to the creation of four blockade diamonds as well as four conductance peaks per quantized energy level. The stability diagrams help in designing stable transistors and qubits that exhibit a voltage map that can be used for control in these devices.
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