アノマリーホール効果ベースのニューロモルフィックデバイスにおけるセンシング、コンピューティング、ストレージのモノリシック統合

Conventional neuromorphic computing is hindered by the physical separation of the sensing, memory, and processing units. This work addresses the critical challenge of intrinsically integrating these functions within a monolithic device. We present a novel Ag/NiO/NiCo₂O₄ heterostructure that integrates magnetic sensing, memristor-based storage, and analog computation together. This device exploits the anomalous Hall effect in the NiCo₂O₄ layer, which exhibits perpendicular magnetic anisotropy, to concurrently enable magnetic field transduction (sensing) and intrinsic sigmoid activation function (computation). Concurrently, a nickel oxide layer serves as a nonvolatile memristor, achieving reconfigurable storage by further modulating the square anomalous Hall loop of the NiCo₂O₄ layer (storage). Crucially, the memory state of the nickel oxide layer electrically reconfigures the anomalous Hall effect response of the NiCo₂O₄ layer, which is achieved through interfacial modulation via oxygen vacancy migration. Experimentally, programming the nickel oxide memristor with low-voltage excitation (±2 V) controllably and nonvolatily modulates the sigmoidal activation threshold. Upon excitation, the device can be programmatically switched between high-sensitivity (3 V/(A·T)) and wide-dynamic-range (±200 mT) modes while maintaining native compatibility with analog computing architectures. This monolithic integration establishes a viable foundation for energy-efficient neuromorphic sensors and multifunctional autonomous systems.