新規ガススイッチ用シリコンカーバイド改質グラファイト電極による性能向上
Motao Zhang1, Haoran Zhang1, Xudong Qiu1
1Northwest Institute of Nuclear Technology, Xi'an 710024, China.
The Review of scientific instruments
|December 24, 2025
まとめ
SiC表面改質はガススイッチ用グラファイト電極を強化します。これにより、破壊安定性が向上し、破壊電圧が増加し、信頼性の高い電気用途のためのばらつきが減少します。
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