グラフェンとSiCの間に挿入された銀単層における点欠陥とその動的挙動

Point defects give rise to sharp modifications in the structures and electronic properties of two-dimensional metals, offering an atomic-level platform for fundamental studies and potential applications. In this work, we investigate atomic-scale defects in a two-dimensional silver monolayer intercalated between epitaxial graphene and SiC using scanning tunneling microscopy. Dark and bright defects are identified as vacancies or substitutional impurities within the silver monolayer, each hosting a localized electronic state. Remarkably, under tunneling electron excitation at negative bias, the bright defects exhibit dynamic behaviors characterized by inelastic switching between two states. The switching can be reversibly controlled by the microscope tip, enabling the defects to function as atomic-scale two-level conductance switches. Analysis of defect switching reveals possible defect origins and the relationship between dark and bright defect species. Our findings establish a pathway to precise manipulation of defects in two-dimensional metals and uncover previously unexplored dynamics with potential use in nanoelectronics.