Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

742
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
742
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

791
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
791
Biasing of FET01:22

Biasing of FET

648
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
648
Characteristics of MOSFET01:17

Characteristics of MOSFET

872
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
872
Field Effect Transistor01:29

Field Effect Transistor

1.1K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.1K
Working Principle of BJT01:15

Working Principle of BJT

1.2K
A Bipolar Junction Transistor (BJT), specifically a PNP transistor in a common-base configuration, effectively amplifies or switches electronic signals by controlling the flow of charge carriers. This discussion focuses on its operation in the active mode.
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...
1.2K

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

A Novel Hybrid Chaotic Map and Cryptographic Hash Whitening for Optimized S-Box Design: Construction, Cryptanalysis, and Lightweight IoT Sensor Evaluation.

Sensors (Basel, Switzerland)·2026
Same author

Retraction notice to "Identification and characterization of major bioactive compounds from Andrographis paniculata (Burm. f.) extracts showed multi-biomedical applications" [Environ. Res. 242 (2024) 117763].

Environmental research·2026
Same author

Beating the Clock: Successful Thrombectomy 28 Hours After Stroke in a Young Adult With Internal Carotid Artery Dissection.

Cureus·2026
Same author

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT.

ACS omega·2026
Same author

Application of Machine learning in predicting cancer complications using longitudinal Data: A systematic review and Meta-Analysis.

International journal of medical informatics·2025
Same author

Ge Pocket-Based Dual Gate Tunnel FET: A Label-Free Biosensor.

ACS omega·2025

関連する実験動画

Updated: Jan 7, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.3K

電子増強モード三層高電子移動度トランジスタ：設計と解析

Bushra Qureshi1, Abdullah G Alharbi2, Rashid Ayub3

  • 1Department of Electronics and Communications Engineering, Jamia Millia Islamia, New Delhi 110025, India.

ACS omega
|January 1, 2026
PubMed
まとめ

3つの伝導経路を持つ新規エンハンスメントモード（Eモード）三電子層（TEL）AlGaN/GaN高電子移動度トランジスタ（HEMT）を設計しました。このデバイスは、従来のHEMTと比較して、相互コンダクタンスと破壊電圧が大幅に向上しています。

キーワード:
AlGaN/GaN HEMTE-modetri-electron-layerhigh-electron-mobility transistorenhancement-modetransconductancebreakdown voltagesemiconductor device

さらに関連する動画

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

9.0K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.2K

関連する実験動画

Last Updated: Jan 7, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.3K
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

9.0K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.2K

科学分野:

  • 材料科学
  • 半導体物理学
  • デバイス工学

背景:

  • 高電子移動度トランジスタ（HEMT）は、高周波アプリケーションに不可欠です。
  • エンハンスメントモード（Eモード）動作は、単純化されたパワーエレクトロニクス回路で望まれます。
  • AlGaN/GaN HEMTで安定したEモード動作を実現することは、依然として課題です。

研究 の 目的:

  • 新規Eモード三電子層（TEL）AlGaN/GaN HEMTの設計と調査。
  • 提案されたデバイスのユニークなマルチコンダクションパス特性の探求。
  • 新規構造によって提供されるパフォーマンスの向上の評価。

主な方法:

  • 新規EモードTEL AlGaN/GaN HEMT構造の設計。
  • Eモード動作のためのP-GaNポケットの組み込み。
  • 二重二次元電子ガス（2DEG）層およびチャージプラズマ電子ガス（CPEG）層の作成。
  • デバイス解析のための二次元（2D）キャリブレーションシミュレーション。

主要な成果:

  • 提案されたデバイスは、3.5 Vの閾値電圧（Vth）でEモード動作を示します。
  • 新規構造は、2つの2DEG層と1つのCPEG層の3つの伝導経路を特徴としています。
  • 大幅な性能向上を確認：従来のHEMTと比較して、相互コンダクタンス（Gm）が284％増加し、破壊電圧が97.4％増加しました。
  • トラップ密度とAlN特性がデバイス性能に及ぼす影響の包括的な分析。

結論:

  • 新規EモードTEL AlGaN/GaN HEMTは、優れた性能特性を示します。
  • マルチコンダクションパス設計は、デバイス効率と破壊電圧を効果的に向上させます。
  • この研究は、先進的なGaNベースの電子デバイスの有望な道筋を示しています。