関連する実験動画

Updated: Jan 7, 2026

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.6K

EASTでECRH支援オーム式起動で密度フリーモードへのアクセス

Jiaxing Liu1, Ping Zhu1,2, Dominique Franck Escande3

  • 1State Key Laboratory of Advanced Electromagnetic Technology, International Joint Research Laboratory of Magnetic Confinement Fusion and Plasma Physics, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 453500, China.

Science advances
|January 1, 2026
PubMed
まとめ

No abstract available in PubMed .

さらに関連する動画

Applying Dynamic Strain on Thin Oxide Films Immobilized on a Pseudoelastic Nickel-Titanium Alloy
09:35

Applying Dynamic Strain on Thin Oxide Films Immobilized on a Pseudoelastic Nickel-Titanium Alloy

Published on: July 28, 2020

5.3K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.3K

関連する実験動画

Last Updated: Jan 7, 2026

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.6K
Applying Dynamic Strain on Thin Oxide Films Immobilized on a Pseudoelastic Nickel-Titanium Alloy
09:35

Applying Dynamic Strain on Thin Oxide Films Immobilized on a Pseudoelastic Nickel-Titanium Alloy

Published on: July 28, 2020

5.3K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.3K

関連する概念動画

Theory of Metallic Conduction01:17

Theory of Metallic Conduction

1.7K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

861
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
861
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー
Jove
Visualize
お問い合わせ