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Updated: Jan 7, 2026

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
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Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

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オキシード分離器のバリウムチタナートの自己バッファリングエピタキシは,高性能電光調節器を可能にします

Chenguang Deng1, Yutong He2, Wenfeng Yang1

  • 1State Key Laboratory of New Ceramic Materials, School of Materials Science and Engineering, Tsinghua University, Beijing, China.

Light, science & applications
|January 1, 2026
PubMed
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No abstract available in PubMed .

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Last Updated: Jan 7, 2026

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
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関連する概念動画

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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