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インターフェースエンジニアリングは,低温の銅と銅の結合のために,電化ナノグライン銅の自己溶解を抑制します

Gangqiang Peng1, Xinyi Dong1,2, Binzhao Li3

  • 1Department of Systems Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 5, 2026
PubMed
まとめ

No abstract available in PubMed .

キーワード:
Cu−Cuの直接結合先進的な電子包装低温結合ナノ粒子のCu

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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