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Updated: Jan 7, 2026

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統合されたバルク表面工学は,タンデム光伏のMAフリーワイドバンドギャップペロフスキットを安定させる

Yu Tong1,2, Biao Li2, Youming Zhu2

  • 1Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, P. R. China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 5, 2026
PubMed
まとめ

No abstract available in PubMed .

キーワード:
bulk 表面分子結合効果欠陥パッシベーションハリド分離タンドム光発電ブロードバンドギャップペロブスキート

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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