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Updated: Jan 7, 2026

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バッテリー型金属硫化物のMXene誘導型偽容量変換:高速度ナトリウム貯蔵のためのパラダイム

Panji Xu1, Yubing Li1, Shuaikai Xu1,2

  • 1Center on Nanoenergy Research, School of Physics Science and Technology, Guangxi University, Nanning, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)
|January 5, 2026
PubMed
まとめ

No abstract available in PubMed .

キーワード:
0D/2Dヘテロ構造MXene対応の容量強化インターフェイス電子カップリングインターレイヤーの閉じ込め偽容量型トランジション

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Last Updated: Jan 7, 2026

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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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