深紫外LIBSを用いた光電子デバイスのナノスケール深さプロファイリング
Atchutananda Surampudi1, Mool C Gupta1
1Charles L. Brown Department of Electrical & Computing Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.
ACS omega
|January 8, 2026
まとめ
深紫外レーザー誘起ブレークダウン分光法(LIBS)は、約10秒nmのナノスケール元素深さプロファイリングを実現します。このポータブル法は、薄膜および半導体デバイスのリアルタイム分析に高い感度を提供します。
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