III-ニ族半導体ナノワイヤ：分子線エピタキシーおよび光電子デバイスにおける最近の進歩

Semiconductor nanowires have continued to be an important material format for both fundamental science and device research. Recent years have witnessed a fantastic progress on semiconductor nanowires across different material systems, such as II-VI, III-V, III-nitrides, and so on. In this review paper, I would like to focus on some of the recent developments in III-nitride nanowires and their device applications. A specific III-nitride nanowire synthesis technique, molecular beam epitaxy (MBE), which is a highly controllable, scalable, and industrial production compatible material synthesis technique, is focused. Recent understanding about the MBE growth of IIInitride nanowires, including low temperature selective area epitaxy (SAE) and chamber configuration dependent properties, is discussed. Moreover, recent advances on III-nitride nanowire light-emitting and photodetection devices are discussed. In addition, emerging studies on scandium (Sc) incorporated III-nitride nanowires and devices are discussed. The intention of this review paper is to complement recent reviews in the field of III-nitride nanowire research and provide readers some future perspectives on this intriguing semiconductor material system.