AlGaN/GaNおよびAlN/GaNヘテロ構造における界面を横断するAl拡散のSIMS調査

This study investigates Metal-Organic Vapor Phase Epitaxy (MOVPE)-grown AlGaN/GaN and AlN/GaN heterostructures using high-temperature thermal annealing and Secondary Ion Mass Spectrometry (SIMS). By fitting experimental diffusion coefficients (DAl) to the Arrhenius equation, two crucial kinetic parameters were found: the activation energy (E_a) and the pre-factor (D₀). In the AlGaN/GaN structure, the dominating out-diffusion of Al has a large D₀ = 4.03 × 10^-5 cm² s^-1 and a low activation energy in the range of [2.1-2.4 eV]. A substitutional diffusion mechanism in the crystal lattice mediated by defects is closely linked to the low E_a. Significantly higher activation energies (E_a) of 3.66 and 4.59 eV, respectively, control both in- and out-diffusion processes in the AlN/GaN structure. The better intrinsic thermal stability of the pure AlN layer, whose stability is attained by a strong energy barrier, is confirmed by the increase of more than 1.2 eV in E_a.