ダブルレイヤー複合フィルムを用いた抵抗ひずみゲージの低温効果
Mengqiu Li1,2, Zhiyuan Hu1,2, Fengming Ye1,2
1National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China.
Micromachines
|January 28, 2026
まとめ
本研究では、温度効果を大幅に低減する新しいダブルレイヤー複合フィルムひずみゲージを紹介します。この技術革新により、橋や建物の構造ヘルスモニタリングの測定精度が向上します。
科学分野:
- 材料科学;工学;物理学
背景:
- 従来のひずみゲージは温度誘発誤差に悩まされており、構造ヘルスモニタリングの精度を損なっています。;温度効果は偽信号を導入し、重要インフラにおけるひずみ測定の信頼性を制限します。
研究 の 目的:
- 超近ゼロ温度効果と高いTCR再現性を持つ新しい抵抗ひずみゲージを開発すること。;構造ヘルスモニタリングの改善のために、ひずみ測定に対する温度変動の影響を軽減すること。
主な方法:
- 反対の温度抵抗特性を持つ材料を利用したダブルレイヤー複合フィルムひずみゲージの作製。;ひずみゲージの抵抗温度係数(TCR)、温度効果、ゲージファクター、および線形性の特性評価。
主要な成果:
- 約0.8 ppm/°Cの調整可能な超近ゼロTCRと優れたTCR再現性を達成しました。;単層合金ゲージと比較して、温度干渉に対する感度が大幅に低下しました。;高い測定忠実度を示す、優れた線形性を持つ1.83のゲージファクターが報告されました。
結論:
- 開発されたダブルレイヤー複合フィルムひずみゲージは、温度効果を最小限に抑えることで優れた性能を発揮します。;この技術は、橋や建物の構造における応力モニタリングの精度に大きな可能性を秘めています。;調整可能なTCRと優れた安定性により、信頼性の高い構造ヘルスモニタリングのための有望なソリューションとなります。
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