ポリ(3-ヘキシルチオフェン)電界効果トランジスタにおける凝集制御による電荷輸送と閾値電圧変調
1Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Republic of Korea.
Materials (Basel, Switzerland)
|January 28, 2026
まとめ
ポリ(3-ヘキシルチオフェン)(P3HT)電界効果トランジスタ(FET)の最適化には、膜厚の制御が含まれる。効率的なP3HTデバイスにおける電荷輸送には、ポリマー鎖構造のバランスに最適な約10-20 nmの膜厚が重要である。
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