一価金属-五価金属-二価カルコゲン化物半導体(I-V-VI2)のクラスにおける陽イオン配列、幾何学的歪み、および電子的特性のパターンの合理化
Gabe Flanagin1, Robert F Berger1
1Department of Chemistry, Western Washington University, Bellingham Washington 98225, United States.
Abstract:
Chalcogenide semiconductors are of interest as light absorbers for solar energy conversion applications. To fully realize their potential, it is crucial to understand how to tune the optoelectronic properties of these compounds through changes in their composition and atomic structure. In this paper, we use density functional theory calculations as a guide to understanding and tuning a class of ABX2 (I-V-VI2) compounds (A = Li, Na, K, Rb; B = As, Sb, Bi; X = S, Se). While these compounds can all be viewed as superstructures of NaCl, they have remarkable variety in their patterns of cation ordering and geometric distortion. By exploring a novel model that connects the sequences of atoms along B-X bond axes to local bonding motifs (2-center 2-electron and 3-center 4-electron), we rationalize the structural variety in this class of compounds and suggest how it can be leveraged to tune their properties such as band gap.
関連する概念動画
Geometric Mean
In cases of multiplicative data, the geometric mean is used for statistical analysis. First, the product of all the elements is taken. Then, if there are n elements in the...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Geometric Sequences
Rational Expressions
Rationalizing Substitutions
Types of Semiconductors


