低電力・高密度メモリ向け反強磁性体における対称性の破れと印加磁場による非交互スピン分裂

Altermagnets, due to spontaneous spin splitting induced by the breaking of the PT inversion symmetry, are now widely used in the design of novel antiferromagnetic (AFM) spintronic devices. Herein, we demonstrate symmetry breaking in AFM via slip and strain engineering, achieving a non-alter spin splitting compensated magnet. As a demo concept, a four-layer sliding strategy in GdI₂ is put forward, enabling sliding-induced ferroelectric (FE) and magnetic switching. The FE polarization breaks PT symmetry, inducing spin-split band structures that drive AFM to ferromagnetic (FM) phase transformation or nonrelativistic spin-splitting (NRSS) AFM. The designed multiferroic tunnel junction demonstrates electric-field-controlled four-state resistance switching with low resistance area. The regulation effect of strain on the device's transport properties has also been simulated. The compressive strain enhances the crystal symmetry in the FE-FM phase, triggering an FM-NRSS-mediated AFM transition and boosting tunneling electromagnetic resistance, providing a novel strategy and mechanism for developing low-power, high-density memory devices.