二次元異方性ReS₂/MoS₂垂直ヘテロ構造におけるメソスケールエピタキシー
Saiphaneendra Bachu1, Youjian Tang2, Lauren Stanton1
1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Abstract:
Effects of lattice mismatch and twist on epitaxy in two-dimensional (2D) vertical heterostructures are well-explored, whereas the effects of in-plane anisotropy are largely unknown. Here, we report the synthesis of ReS2/MoS2 vertical heterostructures using chemical vapor deposition, combining anisotropic (triclinic) ReS2 and isotropic (hexagonal) MoS2. A combination of scanning/transmission electron microscopy (S/TEM) and density functional theory calculations are used to elucidate the microstructure of ReS2/MoS2 heterostructures and reveal a complex interplay of interfacial epitaxy, lattice mismatch strain, and anisotropy. We observe that the heterostructure system's ability to relax interlayer registry differs in the crystallographic directions of larger and smaller lattice mismatch. It nevertheless obtains an overall effective lattice registry on the longest length scales by means of variations in the Re chain direction that create a quilt-like pattern of stripe domains, a phenomenon we describe as mesoscale epitaxy.
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