関連する実験動画

Updated: Feb 17, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

ゲート局所化フッ素化は,強化モードのAlGaN/GaN高電子流動性トランジスタを可能にします

Do Wan Kim¹, Byungsoo Kim¹, Yongjoo Cho²

¹Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

ACS applied electronic materials

|February 16, 2026

まとめ

新しいゲート局所化されたCHF3プラズマプロセスは,ガリウム窒素 (GaN) ベースの高電子移動性トランジスタ (HEMT) を通常オフに可能にします. この方法は,安定した値電圧制御と低ゲート漏れを効率的なパワーエレクトロニクスに提供します.

科学分野:

マテリアルサイエンス材料科学
半導体デバイスの物理半導体デバイスの物理

背景:

ナトリウムガリウム (GaN) ベースの高電子流動性トランジスタ (HEMT) は,高電力および高周波のアプリケーションに不可欠です.
機能強化モード (Eモード) の動作は,故障防止行動と減少した待機電力による電源切り替えに望ましい.
伝統的なEモード製造方法には,複雑さ,表面損傷,不安定性などの課題があります.

研究の目的:

通常オフのAlGaN/GaN HEMTsのためのシンプルで安定した製造プロセスを開発する.
従来のEモードの強化戦略の限界に対処するために.

主な方法:

ゲート・ローカライズされたCHF3プラズマプロセスは採用されました.
このプロセスは,自己制限の穴とフッ素で終わっている表面を作り出しました.
表面の劣化を最小限に抑えるために,プラズマ曝露はゲート領域に限定されました.

主要な成果:

このプロセスは,標準的にAlGaN/GaN HEMTを停止させ,値電圧 (Vth) の安定した正のシフトを可能にしました.
フッ素の組み込みは,偏振電荷を補正し,水素は欠陥を被動化しました.
製造されたデバイスは,バイアス・ストレスの下でゲート漏れが少ない状態で,通常動作が停止していることを示しました.

結論:

ゲート局所化されたCHF3プラズマプロセスは,EモードのGaN HEMTへの実用的で安定した経路を提供します.
この方法では,ゲートの深層の掘り下げを避け,製造の複雑性と不安定性を軽減します.
開発されたアプローチは,エネルギー効率の良い,高周波,高電力電子システムに適しています.

キーワード:

アルガン/ガンのヘムツ CHF3プラズマトリートメント強化モードで動作する.ゲートインセスの入り口.値電圧エンジニアリング

さらに関連する動画

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

関連する概念動画

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...