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Updated: Feb 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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VO2薄膜ベースの多物理場調節Pビットデバイス

Bowen Sun1, Jianjun Li1, Ting Zhou1

  • 1National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui, P. R. China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|February 16, 2026
PubMed
まとめ

研究者は,より迅速な組み合わせ最適化のために,新しいバナジウム二酸化物 (VO2) ベースの確率ビット (P-ビット) を開発しました. これらのP-ビットは,調節可能なランダム性のためのシネージスティックマルチ物理フィールド変調を利用し,従来のCMOS P-ビットの制限を克服します.

キーワード:
モット・オシレータ (Mott Oscillator) とは段階変化材料 (PCM) とは確率ビット (P‐bit)二酸化ヴァナジウム二酸化物は,

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Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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