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Updated: Feb 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

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ポッツモデルに基づくフローティングボディのMOSFETを用いたマルチステート確率計算は,複雑な組み合わせ最適化問題を解くためのポッツモデルに基づいています

Sunwoo Cheong1, Soo Hyung Lee1, Janguk Han1

  • 1College of Engineering, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Republic of Korea.

Advanced materials (Deerfield Beach, Fla.)
|February 17, 2026
PubMed
まとめ

この研究は,複雑な組み合わせ最適化問題を効率的に解決するために,MOSFETを使用する新しい多状態確率計算システムを導入します. 新しいシステムは,従来の方法と比較して,より速い収束とより良いエネルギー効率を提供します.

キーワード:
アンネリング annealing アンネリング組み合わせによる最適化です.フローティングボディのMOSFETマルチステート国家である.確率計算による確率計算

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