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Updated: Feb 20, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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電子-フォノン相互作用が,有機分子とMoS2単層間のインターフェースの電子構造に与える影響

Ignacio Gonzalez Oliva1, Sebastian Tillack1, Fabio Caruso1,2

  • 1Physics Department and CSMB, Humboldt-Universität zu Berlin, Zum Großen Windkanal 2, 12489 Berlin, Germany.

The Journal of chemical physics
|February 18, 2026
PubMed
まとめ

電子-フォノン相互作用は,ハイブリッドのMoS2-有機分子インターフェースの電子構造に大きく影響します. 振動は,バンドギャップのリノーマライゼーションと,ピレンとピリジン系におけるユニークなスペクトル特性を引き起こします.

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